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Typical Characteristics T C = 25°C unless otherwise noted
1000
10 μ s
500
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
100
100 μ s
100
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
SINGLE PULSE
DC
1ms
10ms
10
STARTING T J = 25 o C
STARTING T J = 150 o C
T J = MAX RATED
T C = 25 o C
0.1
1
1
10
100
0.001
0.01
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
150
PULSE DURATION = 80 μ s
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
150
PULSE DURATION = 80 μ s
125
100
75
DUTY CYCLE = 0.5% MAX
V DD = 15V
T J = 25 o C
125
100
75
DUTY CYCLE = 0.5% MAX
T C = 25 o C
V GS = 10V
V GS = 5V
V GS = 4V
50
T J = 175 o C
50
25
0
T J = -55 o C
25
0
V GS = 3V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
13
12
11
10
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 5V
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
V GS = 10V
V GS = 5V, I D = 60A
9
0.5
0
20
40
60
80
-80
-40
0
40
80
120
160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
?2010 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB14AN06LA0_F085 Rev. C
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